Low-Field Mobility and High-Field Velocity of Charge Carriers in InGaAs/InP High-Electron-Mobility Transistors

Development of transistors for advanced low-noise amplifiers requires better understanding mechanisms governing the charge carrier transport in correlation with noise performance. In this article, we report on study velocity InGaAs/InP high-electron-mobility (HEMTs) found via geometrical magnetoresistance wide range drain fields, up to 2 kV/cm, at a cryogenic temperature K. We observed, first time experimentally, peaks and that peak corresponding field decrease significantly transverse field. The low-field mobility are be 65 000 cm 2 /Vs $1.2\times 10^{{6}}$ cm/s, respectively. Extrapolations lower fields show can as high notation="LaTeX">$2.7\times 10^{{7}}$ cm/s. intrinsic transit frequency 172 GHz gate length 250 nm. demonstrated, time, reveal opposite dependencies field, indicating difference dominating low fields. Therefore, is an appropriate parameter characterization development HEMTs, complementary mobility. Analysis indicates governed by screening Coulomb potential ionized impurities responsible scattering. overshoot associated electron quantization subband formation caused results research clarify ways further HEMTs applications.